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龙夏MOS

  • TRENCH MOSFET

    SGT MOSFET

    VDMOS

    SJMOS

    TMBS-成品

    TMBS-晶圆

  • TRENCH MOSFET

    Part NumberTechnologyPolarityPackageVDS(V)ID(A)RDS(ON)@VGS=10VRDS(ON)@VGS=4.5VVGS(th)QgCissCossCressTjPtot(W)
    Typ(mΩ)Max(mΩ)Typ(mΩ)Max(mΩ)Min(V)Max(V)Typ(nC)Typ(pF)Typ(pF)Typ(pF)Max(℃)
    LM60N02T4-NTO-252206044.8--0.51.1302103450212-55~15060
    LM80N03T4-NTO-25230844.95.9--13302203362277-55~175115
    LM150N03T4-NTO-252201503.23.8--12.5703400356308-55~175110
    LR015N04T10-NTOLL4020011.5--241201148317061015-55~150200
    LM01N02T19
    NDFN1006-3L200.75

    2513000.351.10.62475-55~150305
    LM01P02T23
    PSOT-723-20-0.8

    326400-0.35-1.11.31141714-55~150450


  • VDMOS

    Part Number Technology Polarity Package VDS(V) ID(A) RDS(ON)@VGS=10V RDS(ON)@VGS=4.5V VGS(th) Qg Ciss Coss Cress Tj Ptot(W)
    Typ(mΩ) Max(mΩ) Typ(mΩ) Max(mΩ) Min(V) Max(V) Typ(nC) Typ(pF) Typ(pF) Typ(pF) Max(℃)
    LR096N06PL1 - N TO-247 60 60 7 9.6 - - 1 2.5 18 5169 1523 201 -55~175 60


  • SJMOS

    Part Number Technology Polarity Package VDS(V) ID(A) RDS(ON)@VGS=10V RDS(ON)@VGS=4.5V VGS(th) Qg Ciss Coss Cress Tj Ptot(W)
    Typ(mΩ) Max(mΩ) Typ(mΩ) Max(mΩ) Min(V) Max(V) Typ(nC) Typ(pF) Typ(pF) Typ(pF) Max(℃)
    LR36N65J2FW1 - N TO-247 650 79 30 36 - - 3.2 4.6 210 5548 306 15 -55~150 525
    LR40N65J2FW1 - N TO-247-3L 650 72 36 40 - - 3.2 4.6 160 1.6 270 1.6 -55~150 496
    LR48N65JCW1 - N TO-247 650 74 42 48 - - 3.3 4.6 170 6600 291 6 -55~150 687
    LR105N65J2FW5 - N TO-220F 650 31 90 103 - - 2.9 4.9 73 1915 123 2.3 -55~150 26
    LR180N25S2 - N TO-263 250 90 16 18 - - 2.4 3.4 72 5100 1463 85 -55~150 291
    LR190N65J2FW5 - N TO-220F 650 20 165 190 - - 3.2 4.6 33 1115 70 1.3 -55~150 26


  • TMBS-成品

    Part Number General Design Package IF(A) VRRM VF IR trr IFSM Tj Circuit Configuration
    Typ(V) Max(V) Typ(V) Max(V) Typ(uA) Max(uA) Typ(ns) Max(ns) Min(A) Max(℃)
    LD10N100T2 Trench SBD TO-263 10 - 100 0.65 - 100 30 -55~150 Trench SBD
    LD40N45I2 Trench SBD TO-263 40 - 45 0.55 - 100 30 -55~150 Trench SBD
    LD40N45SKD2 Trench SBD TO-263 40 - 45 0.547 - 100 30 -55~150 Trench SBD
    LD30N45SKS2 Trench SBD TO-263 30 - 45 0.51 - 100 30 -55~150 Trench SBD
    LD25N45SJS2 Trench SBD TO-263 25 - 45 0.52 - 100 30 -55~150 Trench SBD
    LD20N45SHS2 Trench SBD TO-263 20 - 45 0.52 - 100 30 -55~150 Trench SBD


  • TMBS-晶圆

    Part Number Wafer
    Diameter
    技术水平 产品阶段 Rated
    BV
    IF(A) Ir(uA)@25C Typical
    VF(V)at 25°C
    Die size
    Typical Spec 30A 40A
    D29T50SD 300 Gen 2 P 50V 30A 31 60 0.448 4572×4572
    D29T50SDU 300 Gen 2 P 50V 30A 34 60 0.448 4572×4572
    D35T50SD 300 Gen 2 P 50V 30A 23 60 0.456 4191×4191
    D35T50SDU 300 Gen 2 P 50V 30A 26 60 0.456 4191×4191
    D43T50SD 300 Gen 2 P 50V 30A 23 50 0.461 3810×3810
    D43T50SDG 300 Gen 2 P 50V 30A 28 50 0.457 3810×3810


  • 注:以上MOS只是部分型号,如需了解更多资讯请联系我司业务。联系方式:86-0755-26015986

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